The MMRF1314H/HS from NXP Semiconductors is a 1000 W, 52 V transistor that operates from 1200 to 1400 MHz. It can work in single--ended, push--pull or quadrature configurations. The transistor has Integrated ESD protection with a greater negative voltage range for improved Class C operation and gate voltage pulsing.
It has a VSWR of >20:1 at all phase angles, Gain of 17.7 dB, Input return loss of 18 dB and a drain efficiency of 52.1%.
This device is available in Earless and Gull Wing packaging. The MMRF1314H/HS can be used in pulsed applications and is ideal for high power military and commercial L-Band radar applications.