The MMRF1314H/HS from NXP Semiconductors is a 1000 W, 52 V transistor that operates from 1200 to 1400 MHz. It can work in single--ended, push--pull or quadrature configurations. The transistor has Integrated ESD protection with a greater negative voltage range for improved Class C operation and gate voltage pulsing.

It has a VSWR of >20:1 at all phase angles, Gain of 17.7 dB, Input return loss of 18 dB and a drain efficiency of 52.1%.

This device is available in Earless and Gull Wing packaging. The MMRF1314H/HS can be used in pulsed applications and is ideal for high power military and commercial L-Band radar applications.

Product Specifications

  • Part Number
    MMRF1314H/HS
  • Manufacturer
    NXP Semiconductors
  • Description
    1000 Watt, 1200 to 1400 MHz LDMOS Transistor
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    L Band
  • Application Type
    Radar, Military, Commercial
  • Grade
    Military, Commercial
  • Frequency
    1.2 to 1.4 GHz
  • Gain
    15.5 to 17.2 dBi
  • Power
    1000 to 1130
  • P1dB
    60 to 60.5 dBm
  • Supply Voltage
    52 V
  • Drain Efficiency
    46.5 to 47.5 %
  • Base Current (Ib)
    100 mA
  • VSWR
    20:1
  • Voltage - Drain-Source (Vdss)
    -0.5 to 105 V
  • Voltage - Gate-Source (Vgs)
    -0.6 to 10 V
  • Package Type
    Surface Mount, Ceramic
  • Package
    NI--1230H--4S, Eared, NI--1230S--4S, Earless, NI--1230GS--4L, Gull Wing
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    NXP - LDMOS Transistors
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.