The MMRF1316NR1 from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 600 MHz, Gain 27 dB, Power 54.8 dBm(300 W), P1dB 313 dBm, Supply Voltage 50 V. More details for MMRF1316NR1 can be seen below.

Product Specifications

  • Part Number
    MMRF1316NR1
  • Manufacturer
    NXP Semiconductors
  • Description
    N-Channel LDMOS Transistor from 1.8 to 600 MHz
  • Transistor Type
  • Polarity
    N-Channel
  • Application
    UHF, Bluetooth, Zigbee, GPS
  • Application Type
    Military, Radar, Wireless Communication, Aerospace
  • Grade
    Military, Commercial, Space
  • Frequency
    1.8 to 600 MHz
  • Gain
    27 dB
  • Power
    54.8 dBm(300 W)
  • P1dB
    313 dBm
  • Supply Voltage
    50 V
  • Drain Current
    100 mA
  • Effeciency
    0.71
  • Junction Temperature (Tj)
    -40 to 225 Degree C
  • Voltage - Drain-Source (Vdss)
    -0.5 to 133 VDC
  • Voltage - Gate-Source (Vgs)
    -6.0 to 10 Vdc
  • Thermal Resistance
    0.22 Degree C/W
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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