The MMRF1317H/HS from NXP Semiconductors is 1300 W, 50 V transistor that operates from 1030 to 1090 MHz. It can work in single--ended, push--pull or quadrature configurations. The transistor has Integrated ESD protection with a greater negative voltage range for improved Class C operation and gate voltage pulsing. It has a VSWR of >10:1, Gain of 17.7 dB, Input return loss of -12 dB and a drain efficiency of 58.1%.

This device is available in an Earless package and is ideal for use in IFF and secondary radar transponders.

Product Specifications

  • Part Number
    MMRF1317H/HS
  • Manufacturer
    NXP Semiconductors
  • Description
    1300 Watts, 1030 to 1090 MHz LDMOS Transistor
  • Transistor Type
  • Polarity
    N-Channel
  • Application Type
    Radar, Military, Commercial
  • Grade
    Military, Commercial
  • Frequency
    1.03 to 1.09 GHz
  • Gain
    18.2 to 18.9 dBi
  • Power
    1100 to 1300 W
  • P1dB
    60.4 to 60.5 dBm
  • Supply Voltage
    50 V
  • Drain Efficiency
    56 to 57.9 %
  • Base Current (Ib)
    100 mA
  • VSWR
    10:10:01
  • Voltage - Drain-Source (Vdss)
    -0.5 to 105 V
  • Voltage - Gate-Source (Vgs)
    -0.6 to 10 V
  • Package Type
    Surface Mount, Ceramic
  • Package
    NI--1230H--4S, Eared, NI--1230S--4S, Earless
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    NXP - LDMOS Transistors
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