The MMRF1317H/HS from NXP Semiconductors is 1300 W, 50 V transistor that operates from 1030 to 1090 MHz. It can work in single--ended, push--pull or quadrature configurations. The transistor has Integrated ESD protection with a greater negative voltage range for improved Class C operation and gate voltage pulsing. It has a VSWR of >10:1, Gain of 17.7 dB, Input return loss of -12 dB and a drain efficiency of 58.1%.
This device is available in an Earless package and is ideal for use in IFF and secondary radar transponders.