The MMRF5014HR5 from NXP Semiconductors is a RF Transistor with Frequency 1 MHz to 2.69 GHz, Gain 16 dB, Power 51 dBm(125 W), Supply Voltage 50 V, Drain Current 350 mA. More details for MMRF5014HR5 can be seen below.

Product Specifications

  • Part Number
    MMRF5014HR5
  • Manufacturer
    NXP Semiconductors
  • Description
    1 MHz to 2.69 GHz, GaN Transistor, SiC Transistor
  • Transistor Type
  • Application
    UHF, Bluetooth, Zigbee, GPS
  • Application Type
    Military, Radar, Wireless Communication, Aerospace
  • Grade
    Military, Commercial, Space
  • Frequency
    1 MHz to 2.69 GHz
  • Gain
    16 dB
  • Power
    51 dBm(125 W)
  • Supply Voltage
    50 V
  • Drain Current
    350 mA
  • Effeciency
    0.58
  • Junction Temperature (Tj)
    -55 to 225 Degree C
  • Voltage - Drain-Source (Vdss)
    125 VDC
  • Voltage - Gate-Source (Vgs)
    -8 to 0 Vdc
  • Thermal Resistance
    0.86 Degree C/W
  • Package
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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