The MMRF5017HS from NXP is a RF Power GaN Transistor that operates from 30 to 2200 MHz. It provides an output power of 125 W with an efficiency of 59.1% while operating over a 50 V supply. The transistor is available in a surface mount NI-400S-2S package and is ideal for radar, jammers, EMC testing, mobile radios and wireless cellular infrastructure applications.

Product Specifications

    Product Details

    • Part Number :
      MMRF5017HS
    • Manufacturer :
      NXP Semiconductors
    • Description :
      125 W RF Power GaN Transistor from 30 to 2200 MHz

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      Radar, Aerospace & Defence
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      30 to 2200 MHz
    • Power :
      51 dBm CW, 200 W Pulsed
    • Power(W) :
      125 W CW, 200 W Pulsed
    • P1dB :
      0 to 51
    • Effeciency :
      59.1 %
    • Supply Voltage :
      50 V

    Technical Documents

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