The MRF1511N from NXP Semiconductors is a RF Transistor with Frequency 175 MHz, Power 39.03 dBm, Power(W) 8 W, Power Gain (Gp) 13 dB, VSWR 20.00:1. Tags: Surface Mount. More details for MRF1511N can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MRF1511N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Mobile, Radio, Commercial, FM
    • CW/Pulse :
      CW
    • Frequency :
      175 MHz
    • Power :
      39.03 dBm
    • Power(W) :
      8 W
    • Power Gain (Gp) :
      13 dB
    • VSWR :
      20.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      7.5 V
    • Threshold Voltage :
      1 to 2.1 Vdc
    • Voltage - Gate-Source (Vgs) :
      20 Vdc
    • Drain Efficiency :
      0.7
    • Drain Current :
      150 mA
    • Thermal Resistance :
      2 °C/W
    • Package Type :
      Surface Mount
    • Package :
      CASE 466-03, STYLE 1 PLD-1.5
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

Click to view more product details on manufacturer's website  »

Application Note

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