MRF24300N Image

MRF24300N

The MRF24300N from NXP is a RF Power LDMOS Transistor that operates from 2400 to 2500 MHz. This transistor has been developed for industrial, scientific, medical (ISM) and RF Energy applications at 2450 MHz. It provides up to 320 watts of CW power with a gain of 13.1 dB and has an efficiency of 60.5%. This device requires a 32 V supply and is internally matched to 50 ohms. This RoHS complaint transistor also has integrated ESD protection. It is included in NXP's product longevity program with assured supply for a minimum of 10 years after launch.

Product Specifications

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Product Details

  • Part Number
    MRF24300N
  • Manufacturer
    NXP Semiconductors
  • Description
    320 Watt RF Power LDMOS Transistor from 2400 to 2500 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, ISM, RF Energy
  • Application
    Scientific, Medical
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.4 to 2.5 GHz
  • Power
    54.15 to 55.19 dBm
  • Power(W)
    330.37 W
  • CW Power
    15.9 to 320 W
  • P1dB
    54.8 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    13.1 dB
  • Input Return Loss
    -18 to -9 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    32 V
  • Threshold Voltage
    1.6 to 2.4 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.605
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.24 °C/W
  • Package Type
    Flange
  • Package
    OM--780--2L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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