The MRF24G300HS from NXP is an RF Power GaN Transistor that operates from 2400 to 2500 MHz. It provides an output power of 300 W with a gain of 15.2 dB and an efficiency of 73% while operating over a 50 V supply. This device is suitable for use in CW, pulse, cycling and linear applications. The transistor is available in a surface mount package and is ideal for plasma generation, lighting and Industrial heating applications.

Product Specifications

    Product Details

    • Part Number :
      MRF24G300HS
    • Manufacturer :
      NXP Semiconductors
    • Description :
      300 W RF GaN Power Transistor from 2400 to 2500 MHz

    General Parameters

    • Technology :
      GaN on SiC
    • Application Industry :
      ISM, RF Energy
    • CW/Pulse :
      CW, Pulse
    • Frequency :
      2400 to 500 MHz
    • Power :
      54.77 dBm
    • Power(W) :
      300 W
    • Gain :
      14.9 to 15.3 dB
    • Supply Voltage :
      50 V
    • Drain Efficiency :
      70.4 to 74.4 %
    • Package Type :
      Flanged
    • Operating Temperature :
      0 to 55 Degrees C
    • Storage Temperature :
      -60 to 150 Degrees C

    Technical Documents

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