The MRF5S19150H from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 14 dB at 14 MHz, Power 120 W, P1dB 120 W, Supply Voltage 28 V. More details for MRF5S19150H can be seen below.

Product Specifications

  • Part Number
    MRF5S19150H
  • Manufacturer
    NXP Semiconductors
  • Description
    1930-1990 MHz, 32 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1930 to 1990 MHz
  • Gain
    14 dB at 14 MHz
  • Power
    120 W
  • P1dB
    120 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.41 °CW
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