The MRF6P23190HR6 from NXP Semiconductors is a RF Transistor with Frequency 2300 to 2400 MHz, Gain 14 dB at 14 MHz, Power 190 W, P1dB 190 W, Supply Voltage 28 V. More details for MRF6P23190HR6 can be seen below.

Product Specifications

  • Part Number
    MRF6P23190HR6
  • Manufacturer
    NXP Semiconductors
  • Description
    2300-2400 MHz, 40 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2300 to 2400 MHz
  • Gain
    14 dB at 14 MHz
  • Power
    190 W
  • P1dB
    190 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.24 °CW
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