The MRF6S18060N from NXP Semiconductors is a RF Transistor with Frequency 1800 to 2000 MHz, Gain 15 dB at 15 MHz, Power 60 W, P1dB 60 W, Supply Voltage 26 V. More details for MRF6S18060N can be seen below.

Product Specifications

  • Part Number
    MRF6S18060N
  • Manufacturer
    NXP Semiconductors
  • Description
    1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1800 to 2000 MHz
  • Gain
    15 dB at 15 MHz
  • Power
    60 W
  • P1dB
    60 W
  • Supply Voltage
    26 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.81 °CW
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