The MRF6S19060N from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 16 dB at 16 MHz, Power 60 W, P1dB 60 W, Supply Voltage 28 V. More details for MRF6S19060N can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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