The MRF6S19100N from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 14.5 dB at 14.5 MHz, Power 100 W, P1dB 100 W, Supply Voltage 28 V. More details for MRF6S19100N can be seen below.

Product Specifications

  • Part Number
    MRF6S19100N
  • Manufacturer
    NXP Semiconductors
  • Description
    1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1930 to 1990 MHz
  • Gain
    14.5 dB at 14.5 MHz
  • Power
    100 W
  • P1dB
    100 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.61 °CW
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