The MRF6S20010N from NXP Semiconductors is a RF Transistor with Frequency 1600 to 2200 MHz, Gain 15.5 dB at 15.5 MHz, Power 10 W, P1dB 10 W, Supply Voltage 28 V. More details for MRF6S20010N can be seen below.

Product Specifications

  • Part Number
    MRF6S20010N
  • Manufacturer
    NXP Semiconductors
  • Description
    1600-2200 MHz, 10 W, 28 V, GSM/GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Application
    GSM, EDGE
  • Class
    Class AB
  • Features
    Wideband Transistor
  • Frequency
    1600 to 2200 MHz
  • Gain
    15.5 dB at 15.5 MHz
  • Power
    10 W
  • P1dB
    10 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    2.5 °CW
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