The MRF6S21190H from NXP Semiconductors is a RF Transistor with Frequency 2110 to 2170 MHz, Gain 16 dB at 16 MHz, Power 175 W, P1dB 175 W, Supply Voltage 28 V. More details for MRF6S21190H can be seen below.
1805 to 1880 MHz, 89 W Airfast RF Power LDMOS Transistor
4500 to 5900 MHz GaN HEMT for C-Band Radar Systems
GaN HEMT Transistor 1.2 to 1.4 GHz
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