The MRF6S21190H from NXP Semiconductors is a RF Transistor with Frequency 2110 to 2170 MHz, Gain 16 dB at 16 MHz, Power 175 W, P1dB 175 W, Supply Voltage 28 V. More details for MRF6S21190H can be seen below.

Product Specifications

  • Part Number
    MRF6S21190H
  • Manufacturer
    NXP Semiconductors
  • Description
    2110-2170 MHz, 54 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2110 to 2170 MHz
  • Gain
    16 dB at 16 MHz
  • Power
    175 W
  • P1dB
    175 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.3 °CW
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