The MRF6S23100H from NXP Semiconductors is a RF Transistor with Frequency 2300 to 2400 MHz, Gain 15.4 dB at 15.4 MHz, Power 100 W, P1dB 100 W, Supply Voltage 28 V. More details for MRF6S23100H can be seen below.

Product Specifications

  • Part Number
    MRF6S23100H
  • Manufacturer
    NXP Semiconductors
  • Description
    2300-2400 MHz, 20 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2300 to 2400 MHz
  • Gain
    15.4 dB at 15.4 MHz
  • Power
    100 W
  • P1dB
    100 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.59 °CW
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