The MRF6V10010N from NXP Semiconductors is a RF Transistor with Frequency 1090 to 1090 MHz, Gain 25 dB at 25 MHz, Power 10 W, P1dB 10 W, Supply Voltage 50 V. More details for MRF6V10010N can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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