The MRF6V10010N from NXP Semiconductors is a RF Transistor with Frequency 960 MHz to 1.4 GHz, Power 33.01 dBm, Power(W) 2 W, P1dB 40 dBm, Duty_Cycle 0.2. Tags: Surface Mount. More details for MRF6V10010N can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MRF6V10010N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, Radar, RFIC
    • CW/Pulse :
      Pulse
    • Frequency :
      960 MHz to 1.4 GHz
    • Power :
      33.01 dBm
    • Power(W) :
      2 W
    • P1dB :
      40 dBm
    • Peak Output Power :
      250 W
    • Pulsed Power :
      250 W
    • Pulsed Width :
      100 us
    • Duty_Cycle :
      0.2
    • Power Gain (Gp) :
      23 to 28 dB
    • Input Return Loss :
      -12 to -8 dB
    • Polarity :
      N-Channel
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      1.3 to 2.3 Vdc
    • Breakdown Voltage - Drain-Source :
      100 V
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.69
    • Drain Current :
      10 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      1.6 °C/W
    • Package Type :
      Surface Mount
    • Package :
      CASE 466--03, STYLE 1 PLD--1.5 PLASTIC
    • RoHS :
      Yes
    • Operating Temperature :
      -55 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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