MRF6V10010N Image

MRF6V10010N

RF Transistor by NXP Semiconductors

The MRF6V10010N from NXP Semiconductors is a RF Transistor with Frequency 960 MHz to 1.4 GHz, Power 33.01 dBm, Power(W) 2 W, P1dB 40 dBm, Duty_Cycle 0.2. Tags: Surface Mount. More details for MRF6V10010N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF6V10010N
  • Manufacturer
    NXP Semiconductors
  • Description
    Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, Radar, RFIC
  • CW/Pulse
    Pulse
  • Frequency
    960 MHz to 1.4 GHz
  • Power
    33.01 dBm
  • Power(W)
    2 W
  • P1dB
    40 dBm
  • Peak Output Power
    250 W
  • Pulsed Power
    250 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    23 to 28 dB
  • Input Return Loss
    -12 to -8 dB
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    100 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.69
  • Drain Current
    10 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.6 °C/W
  • Package Type
    Surface Mount
  • Package
    CASE 466--03, STYLE 1 PLD--1.5 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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