The MRF6V2300N from NXP Semiconductors is a RF Transistor with Frequency 10 to 600 MHz, Power 54.77 dBm, Power(W) 299.92 W, Power Gain (Gp) 24 to 27 dB, Input Return Loss -16 to -3 dB. More details for MRF6V2300N can be seen below.

Product Specifications

  • Part Number
    MRF6V2300N
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Scientific, Medical
  • CW/Pulse
    CW
  • Frequency
    10 to 600 MHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • CW Power
    300 W
  • Power Gain (Gp)
    24 to 27 dB
  • Input Return Loss
    -16 to -3 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 Vdc
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 10 Vdc
  • Drain Efficiency
    0.68
  • Drain Current
    900 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.24 °C/W
  • Package Type
    Flange
  • Package
    CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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