The MRF6V3090N from NXP Semiconductors is a RF Transistor with Frequency 470 MHz to 1.215 GHz, Power 42.55 to 49.54 dBm, Power(W) 89.95 W, P1dB 50.7 dBm, Duty_Cycle 0.1. More details for MRF6V3090N can be seen below.

Product Specifications

  • Part Number
    MRF6V3090N
  • Manufacturer
    NXP Semiconductors
  • Description
    Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Broadcast, ISM Band, Commercial, UHF
  • CW/Pulse
    Pulse, CW
  • Frequency
    470 MHz to 1.215 GHz
  • Power
    42.55 to 49.54 dBm
  • Power(W)
    89.95 W
  • CW Power
    18 to 90 W
  • P1dB
    50.7 dBm
  • Peak Output Power
    90 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    21 to 24 dB
  • Input Return Loss
    -14 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.9 to 2.4 Vdc
  • Breakdown Voltage - Drain-Source
    115 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.285
  • Drain Current
    450 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.79 °C/W
  • Package Type
    Flange
  • Package
    TO--270WB--4 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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