The MRF6VP121KH from NXP Semiconductors is a RF Transistor with Frequency 965 MHz to 1.215 GHz, Power 50 dBm, Power(W) 100 W, P1dB 60 dBm, Duty_Cycle 0.1. More details for MRF6VP121KH can be seen below.

Product Specifications

  • Part Number
    MRF6VP121KH
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics
  • CW/Pulse
    Pulse, CW
  • Frequency
    965 MHz to 1.215 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • P1dB
    60 dBm
  • Peak Output Power
    1000 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18.5 to 22 dB
  • Input Return Loss
    -23 to -9 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.9 to 2.4 Vdc
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.56
  • Drain Current
    150 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.02 °C/W
  • Package Type
    Flange
  • Package
    CASE 375D--05, STYLE 1 NI--1230
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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