The MRF6VP3091N from NXP Semiconductors is a RF Transistor with Frequency 470 MHz to 1.215 GHz, Power 42.55 to 49.54 dBm, Power(W) 89.95 W, P1dB 50.7 dBm, Duty_Cycle 0.1. Tags: Flange. More details for MRF6VP3091N can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MRF6VP3091N
    • Manufacturer :
      NXP Semiconductors
    • Description :
      Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence
    • Application :
      Broadcast, ISM Band, Commercial, UHF
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      470 MHz to 1.215 GHz
    • Power :
      42.55 to 49.54 dBm
    • Power(W) :
      89.95 W
    • CW Power :
      18 to 90 W
    • P1dB :
      50.7 dBm
    • Peak Output Power :
      90 W
    • Pulsed Width :
      128 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      21 to 24 dB
    • Input Return Loss :
      -14 to -9 dB
    • VSWR :
      10.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      0.9 to 2.4 Vdc
    • Breakdown Voltage - Drain-Source :
      115 V
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.285
    • Drain Current :
      450 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.79 °C/W
    • Package Type :
      Flange
    • Package :
      TO--270WB--4 PLASTIC
    • RoHS :
      Yes
    • Operating Temperature :
      150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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