The MRF6VP41KH from NXP Semiconductors is a RF Transistor with Frequency 10 to 500 MHz, Power 53.01 dBm, Power(W) 199.99 W, P1dB 60.33 dBm, Duty_Cycle 0.2. More details for MRF6VP41KH can be seen below.

Product Specifications

  • Part Number
    MRF6VP41KH
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Broadcast, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    10 to 500 MHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • P1dB
    60.33 dBm
  • Peak Output Power
    1000 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    19.5 to 20.1 dB
  • Input Return Loss
    -23 to -10.2 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 Vdc
  • Breakdown Voltage - Drain-Source
    100 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.64
  • Drain Current
    150 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.03 °C/W
  • Package Type
    Flange
  • Package
    CASE 375D--05, STYLE 1 NI--1230
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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