The MRF7S18125AH from NXP Semiconductors is a RF Transistor with Frequency 1805 to 1880 MHz, Gain 17 dB at 17 MHz, Power 140 W, P1dB 140 W, Supply Voltage 28 V. More details for MRF7S18125AH can be seen below.

Product Specifications

  • Part Number
    MRF7S18125AH
  • Manufacturer
    NXP Semiconductors
  • Description
    1805-1880 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1805 to 1880 MHz
  • Gain
    17 dB at 17 MHz
  • Power
    140 W
  • P1dB
    140 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.31 °CW
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