The MRF7S18125BH from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 16.5 dB at 16.5 MHz, Power 140 W, P1dB 140 W, Supply Voltage 28 V. More details for MRF7S18125BH can be seen below.

Product Specifications

  • Part Number
    MRF7S18125BH
  • Manufacturer
    NXP Semiconductors
  • Description
    1930-1990 MHz, 125 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1930 to 1990 MHz
  • Gain
    16.5 dB at 16.5 MHz
  • Power
    140 W
  • P1dB
    140 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.31 °CW
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