The MRF7S19120NR1 from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 18 dB at 18 MHz, Power 120 W, P1dB 120 W, Supply Voltage 28 V. More details for MRF7S19120NR1 can be seen below.

Product Specifications

  • Part Number
    MRF7S19120NR1
  • Manufacturer
    NXP Semiconductors
  • Description
    1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1930 to 1990 MHz
  • Gain
    18 dB at 18 MHz
  • Power
    120 W
  • P1dB
    120 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.51 °CW
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