The MRF7S19210H from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 20 dB at 20 MHz, Power 190 W, P1dB 190 W, Supply Voltage 28 V. More details for MRF7S19210H can be seen below.

Product Specifications

  • Part Number
    MRF7S19210H
  • Manufacturer
    NXP Semiconductors
  • Description
    1930-1990 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1930 to 1990 MHz
  • Gain
    20 dB at 20 MHz
  • Power
    190 W
  • P1dB
    190 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.38 °CW
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