The MRF8P23160WH from NXP Semiconductors is a RF Transistor with Frequency 2300 to 2400 MHz, Gain 14.1 dB at 14.1 MHz, Power 150 W, P1dB 150 W, Supply Voltage 28 V. More details for MRF8P23160WH can be seen below.

Product Specifications

  • Part Number
    MRF8P23160WH
  • Manufacturer
    NXP Semiconductors
  • Description
    2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2300 to 2400 MHz
  • Gain
    14.1 dB at 14.1 MHz
  • Power
    150 W
  • P1dB
    150 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.69 °CW
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