The MRF8P29300H from NXP Semiconductors is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power(W) 262.42 W, P1dB 54.19 dBm, Duty_Cycle 0.1, Power Gain (Gp) 12 to 15 dB. More details for MRF8P29300H can be seen below.

Product Specifications

  • Part Number
    MRF8P29300H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 2.9 GHz
  • Power(W)
    262.42 W
  • P1dB
    54.19 dBm
  • Peak Output Power
    320 W
  • Pulsed Power
    320 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    12 to 15 dB
  • Input Return Loss
    -17 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    30 V
  • Threshold Voltage
    1 to 2.5 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.505
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.06 °C/W
  • Package Type
    Flange
  • Package
    CASE 375D--05, STYLE 1 NI--1230
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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