The MRF8S18120H from NXP Semiconductors is a RF Transistor with Frequency 1805 to 1880 MHz, Gain 18.2 dB at 18.2 MHz, Power 120 W, P1dB 120 W, Supply Voltage 28 V. More details for MRF8S18120H can be seen below.

Product Specifications

  • Part Number
    MRF8S18120H
  • Manufacturer
    NXP Semiconductors
  • Description
    1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1805 to 1880 MHz
  • Gain
    18.2 dB at 18.2 MHz
  • Power
    120 W
  • P1dB
    120 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.47 °CW
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