The MRF8S18210WHS from NXP Semiconductors is a RF Transistor with Frequency 1805 to 1995 MHz, Gain 17.8 dB at 17.8 MHz, Power 210 W, P1dB 210 W, Supply Voltage 30 V. More details for MRF8S18210WHS can be seen below.

Product Specifications

  • Part Number
    MRF8S18210WHS
  • Manufacturer
    NXP Semiconductors
  • Description
    1805 MHz - 1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1805 to 1995 MHz
  • Gain
    17.8 dB at 17.8 MHz
  • Power
    210 W
  • P1dB
    210 W
  • Supply Voltage
    30 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.48 °CW
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