The MRF8S19140H from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 19.1 dB at 19.1 MHz, Power 138 W, P1dB 138 W, Supply Voltage 28 V. More details for MRF8S19140H can be seen below.

Product Specifications

  • Part Number
    MRF8S19140H
  • Manufacturer
    NXP Semiconductors
  • Description
    1930-1990 MHz, 34 W Avg., 28 V Single CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    1930 to 1990 MHz
  • Gain
    19.1 dB at 19.1 MHz
  • Power
    138 W
  • P1dB
    138 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.48 °CW
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