The MRF8S19260H from NXP Semiconductors is a RF Transistor with Frequency 1930 to 1990 MHz, Gain 18.2 dB at 18.2 MHz, Power 245 W, P1dB 245 W, Supply Voltage 30 V. More details for MRF8S19260H can be seen below.

Product Specifications

  • Part Number
    MRF8S19260H
  • Manufacturer
    NXP Semiconductors
  • Description
    1930-1990 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Application
    W_CDMA
  • Class
    Class AB
  • Features
    Wideband Transistor
  • Frequency
    1930 to 1990 MHz
  • Gain
    18.2 dB at 18.2 MHz
  • Power
    245 W
  • P1dB
    245 W
  • Supply Voltage
    30 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.3 °CW
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