The MRF8S21120H from NXP Semiconductors is a RF Transistor with Frequency 2110 to 2170 MHz, Gain 17.6 dB at 17.6 MHz, Power 107 W, P1dB 107 W, Supply Voltage 28 V. More details for MRF8S21120H can be seen below.

Product Specifications

  • Part Number
    MRF8S21120H
  • Manufacturer
    NXP Semiconductors
  • Description
    2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2110 to 2170 MHz
  • Gain
    17.6 dB at 17.6 MHz
  • Power
    107 W
  • P1dB
    107 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.53 °CW
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