The MRF8S21200H from NXP Semiconductors is a RF Transistor with Frequency 2110 to 2170 MHz, Gain 18.1 dB at 18.1 MHz, Power 178 W, P1dB 178 W, Supply Voltage 28 V. More details for MRF8S21200H can be seen below.

Product Specifications

  • Part Number
    MRF8S21200H
  • Manufacturer
    NXP Semiconductors
  • Description
    2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2110 to 2170 MHz
  • Gain
    18.1 dB at 18.1 MHz
  • Power
    178 W
  • P1dB
    178 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.31 °CW
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