The MRF8S23120H from NXP Semiconductors is a RF Transistor with Frequency 2300 to 2400 MHz, Gain 16 dB at 16 MHz, Power 107 W, P1dB 107 W, Supply Voltage 28 V. More details for MRF8S23120H can be seen below.

Product Specifications

  • Part Number
    MRF8S23120H
  • Manufacturer
    NXP Semiconductors
  • Description
    2300-2400 MHz, 28 W Avg., 28 V LTE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2300 to 2400 MHz
  • Gain
    16 dB at 16 MHz
  • Power
    107 W
  • P1dB
    107 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.5 °CW
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