The MRF8S26060H from NXP Semiconductors is a RF Transistor with Frequency 2620 to 2690 MHz, Gain 16.3 dB at 16.3 MHz, Power 60 W, P1dB 60 W, Supply Voltage 28 V. More details for MRF8S26060H can be seen below.

Product Specifications

  • Part Number
    MRF8S26060H
  • Manufacturer
    NXP Semiconductors
  • Description
    2620-2690 MHz, 15.5 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2620 to 2690 MHz
  • Gain
    16.3 dB at 16.3 MHz
  • Power
    60 W
  • P1dB
    60 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    1 °CW
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