The MRF8S26120H from NXP Semiconductors is a RF Transistor with Frequency 2620 to 2690 MHz, Gain 15.6 dB at 15.6 MHz, Power 110 W, P1dB 110 W, Supply Voltage 28 V. More details for MRF8S26120H can be seen below.

Product Specifications

  • Part Number
    MRF8S26120H
  • Manufacturer
    NXP Semiconductors
  • Description
    2620-2690 MHz, 28 W Avg., 28 V Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    2620 to 2690 MHz
  • Gain
    15.6 dB at 15.6 MHz
  • Power
    110 W
  • P1dB
    110 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.53 °CW
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