The MRF8S8260H from NXP Semiconductors is a RF Transistor with Frequency 850 to 895 MHz, Gain 21.1 dB at 21.1 MHz, Power 260 W, P1dB 260 W, Supply Voltage 28 V. More details for MRF8S8260H can be seen below.

Product Specifications

  • Part Number
    MRF8S8260H
  • Manufacturer
    NXP Semiconductors
  • Description
    850-895 MHz, 70 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    850 to 895 MHz
  • Gain
    21.1 dB at 21.1 MHz
  • Power
    260 W
  • P1dB
    260 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.36 °CW
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