The MRF8S9100H from NXP Semiconductors is a RF Transistor with Frequency 920 to 960 MHz, Gain 19.3 dB at 19.3 MHz, Power 108 W, P1dB 108 W, Supply Voltage 28 V. More details for MRF8S9100H can be seen below.

Product Specifications

  • Part Number
    MRF8S9100H
  • Manufacturer
    NXP Semiconductors
  • Description
    920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    920 to 960 MHz
  • Gain
    19.3 dB at 19.3 MHz
  • Power
    108 W
  • P1dB
    108 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.65 °CW
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