The MRFE6P3300H from NXP Semiconductors is a RF Transistor with Frequency 470 to 860 MHz, Power 54.77 dBm, Power(W) 299.92 W, P1dB 55.15 dBm, Duty_Cycle 0.01. More details for MRFE6P3300H can be seen below.

Product Specifications

  • Part Number
    MRFE6P3300H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel RF Power MOSFET, 860 MHz, 300 W, 32 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Broadcast, Commercial, Base Station, NCDMA, CDMA, GSM
  • CW/Pulse
    Pulse, CW
  • Frequency
    470 to 860 MHz
  • Power
    54.77 dBm
  • Power(W)
    299.92 W
  • CW Power
    60 to 300 W
  • P1dB
    55.15 dBm
  • Peak Output Power
    270 W
  • Pulsed Width
    12 us
  • Duty_Cycle
    0.01
  • Power Gain (Gp)
    19 to 23 dB
  • Input Return Loss
    -18.4 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    32 V
  • Threshold Voltage
    1 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 12 Vdc
  • Drain Efficiency
    0.448
  • Drain Current
    1600 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.23 °C/W
  • Package Type
    Flange
  • Package
    CASE 375G-04, STYLE 1 NI-860C3
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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