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The MRFE6P3300H from NXP Semiconductors is a RF Transistor with Frequency 470 to 860 MHz, Power 54.77 dBm, Power(W) 299.92 W, P1dB 55.15 dBm, Duty_Cycle 0.01. Tags: Flange. More details for MRFE6P3300H can be seen below.
AlGaAs/InGaAs pHEMT Transistor Die from DC to 18 GHz
15 W GaN HEMT from DC to 6 GHz
Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
5 W Surface-Mount LDMOS FET from 900 to 2700 MHz
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