The MRFE6VP100H from NXP Semiconductors is a RF Transistor with Frequency 1.8 MHz to 2 GHz, Power 50 dBm, Power(W) 100 W, P1dB 50dBm, Duty_Cycle 0.2. More details for MRFE6VP100H can be seen below.

Product Specifications

  • Part Number
    MRFE6VP100H
  • Manufacturer
    NXP Semiconductors
  • Description
    Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Broadcast, ISM Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 MHz to 2 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • CW Power
    100 W
  • P1dB
    50dBm
  • Peak Output Power
    100 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    25 to 27 dB
  • Input Return Loss
    -14 to -9 dB
  • VSWR
    65.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.6 to 2.6 Vdc
  • Breakdown Voltage - Drain-Source
    133 to 141 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.7
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.38 °C/W
  • Package Type
    Flange
  • Package
    NI--780--4
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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