The MRFE6VP61K25N from Freescale is a 1.8 MHz to 600 MHz LMDOS transistor housed in a plastic package. It delivers up to 1250 W CW power with an efficiency of 72.3% and has a gain of 23 dB. It provides a 30 percent reduction in thermal resistance compared to ceramic-packaged transistors. This thermal resistance, combined with CW power, high efficiency and gain, can help lower system costs through enhanced performance and reduced cooling materials. The transistor has a very high VSWR of 65:1 at all phase angles and can be used single-ended or in a push-pull configuration. The MRFE6VP61K25N is ideal for use in industrial and broadcast applications including CO2 lasers, plasma generation equipment, MRI amplifiers and particle accelerators, as well as FM and VHF broadcast transmitters. It requires a 50 V supply.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    High Power 1250 Watt LDMOS Transistor in a Plastic Package
  • Transistor Type
  • Application
    ISM Band, VHF
  • Frequency
    87.5 to 108 MHz
  • Gain
    24 dB
  • Power
    60.97 dBm
  • Supply Voltage
    50 V
  • Package
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