The MRFE6VP6600N from Freescale is a 1.8 MHz to 600 MHz LMDOS transistor housed in a plastic package. It delivers up to 600 W of CW power with an efficiency of 74.6% and has a gain of 22.9 dB. It provides a 30 percent reduction in thermal resistance compared to ceramic-packaged transistors. This thermal resistance, combined with CW power, high efficiency and gain, can help lower system costs through enhanced performance and reduced cooling materials. The MRFE6VP6600N is ideal for use in industrial and broadcast applications including CO2 lasers, plasma generation equipment, MRI amplifiers and particle accelerators, as well as FM and VHF broadcast transmitters. It requires a 50 V supply.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    High Power 600 Watt LDMOS Transistor in a Plastic Package
  • Transistor Type
  • Application
    ISM Band, VHF
  • Frequency
    87.5 to 108 MHz
  • Gain
    24 dB
  • Power
    57.78 dBm
  • Supply Voltage
    50 V
  • Package
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