The MRFE6VP8600H from NXP Semiconductors is a RF Transistor with Frequency 470 to 860 MHz, Power 50.97 dBm, Power(W) 125.03 W, P1dB 58.4 dBm, Duty_Cycle 0.1. More details for MRFE6VP8600H can be seen below.

Product Specifications

  • Part Number
    MRFE6VP8600H
  • Manufacturer
    NXP Semiconductors
  • Description
    LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Broadcast, UHF
  • CW/Pulse
    Pulse, CW
  • Frequency
    470 to 860 MHz
  • Power
    50.97 dBm
  • Power(W)
    125.03 W
  • CW Power
    600 W
  • P1dB
    58.4 dBm
  • Peak Output Power
    600 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18 to 21 dB
  • Input Return Loss
    -12 to -9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.5 to 2.5 Vdc
  • Breakdown Voltage - Drain-Source
    130 to 140 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.3
  • Drain Current
    1400 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.19 °C/W
  • Package Type
    Flange
  • Package
    CASE 375D--05, STYLE 1 NI--1230
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.