The MRFE6VP8600HS from NXP Semiconductors is a RF Transistor with Frequency 470 to 860 MHz, Power 50.97 dBm, Power(W) 125.03 W, P1dB 58.4 dBm, Duty_Cycle 0.1. Tags: Flange. More details for MRFE6VP8600HS can be seen below.

Product Specifications

    Product Details

    • Part Number :
      MRFE6VP8600HS
    • Manufacturer :
      NXP Semiconductors
    • Description :
      LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      ISM, Broadcast
    • Application :
      UHF
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      470 to 860 MHz
    • Power :
      50.97 dBm
    • Power(W) :
      125.03 W
    • CW Power :
      600 W
    • P1dB :
      58.4 dBm
    • Peak Output Power :
      600 W
    • Pulsed Width :
      100 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      18 to 21 dB
    • Input Return Loss :
      -12 to -9 dB
    • VSWR :
      65.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      1.5 to 2.5 Vdc
    • Breakdown Voltage - Drain-Source :
      130 to 140 V
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.3
    • Drain Current :
      1400 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.19 °C/W
    • Package Type :
      Flange
    • Package :
      CASE 375E--04, STYLE 1 NI--1230S
    • RoHS :
      Yes
    • Operating Temperature :
      150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

Click to view more product details on manufacturer's website  »

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