MRFE8VP8600H Image

MRFE8VP8600H

The MRFE8VP8600H from NXP Semiconductors is a RF Transistor with Frequency 470 to 860 MHz, Power 51.46 dBm, Power(W) 139.96 W, P1dB 59 dBm, Duty_Cycle 0.2. Tags: Flange. More details for MRFE8VP8600H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRFE8VP8600H
  • Manufacturer
    NXP Semiconductors
  • Description
    Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Scientific, Medical
  • CW/Pulse
    Pulse, CW
  • Frequency
    470 to 860 MHz
  • Power
    51.46 dBm
  • Power(W)
    139.96 W
  • P1dB
    59 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    20 to 23.6 dB
  • Input Return Loss
    -12 to -9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    115 to 118 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.34
  • Drain Current
    1400 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.16 °C/W
  • Package Type
    Flange
  • Package
    NI--1230H–4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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