MW6S010N Image

MW6S010N

The MW6S010N from NXP Semiconductors is a RF Transistor with Frequency 450 MHz to 1.5 GHz, Power 40 dBm, Power(W) 10 W, P1dB 40 dBm, Power Gain (Gp) 17.5 to 20.5 dB. Tags: Flange. More details for MW6S010N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MW6S010N
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, CDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    450 MHz to 1.5 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • CW Power
    10 W
  • P1dB
    40 dBm
  • Power Gain (Gp)
    17.5 to 20.5 dB
  • Input Return Loss
    -18 to -10 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 12 Vdc
  • Drain Efficiency
    0.32
  • Drain Current
    125 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.85 °C/W
  • Package Type
    Flange
  • Package
    CASE 1265-09, STYLE 1 TO-270-2 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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