MW7IC2425NR1 Image

MW7IC2425NR1

RF Transistor by NXP Semiconductors

The MW7IC2425NR1 from NXP Semiconductors is a RF Transistor with Frequency 2.4 to 2.5 GHz, Power 43.98 dBm, Power(W) 25 W, P1dB 44 dBm, Power Gain (Gp) 25.5 to 30.5 dB. Tags: Flange. More details for MW7IC2425NR1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MW7IC2425NR1
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM
  • Application
    Scientific, Medical
  • CW/Pulse
    CW
  • Frequency
    2.4 to 2.5 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • CW Power
    25 W
  • P1dB
    44 dBm
  • Power Gain (Gp)
    25.5 to 30.5 dB
  • Input Return Loss
    -18 to -10 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.2 to 2.7 Vdc
  • Voltage - Gate-Source (Vgs)
    -5 to 10 Vdc
  • Drain Efficiency
    0.438
  • Drain Current
    55 to 195 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.2 °C/W
  • Package Type
    Flange
  • Package
    CASE 1886-01 TO-270 WB-16 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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