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GX3441

RF Transistor by Polyfet RF Devices

Note : Your request will be directed to Polyfet RF Devices.

The GX3441 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 3 GHz, Power 49 dBm, Power(W) 80 W, Power Gain (Gp) 12 dB, VSWR 10.0:1. Tags: Flange. More details for GX3441 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GX3441
  • Manufacturer
    Polyfet RF Devices
  • Description
    80 W, GaN on SiC HEMT Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Frequency
    1 MHz to 3 GHz
  • Power
    49 dBm
  • Power(W)
    80 W
  • Power Gain (Gp)
    12 dB
  • VSWR
    10.0:1
  • Breakdown Voltage - Drain-Source
    250 V
  • Voltage - Drain-Source (Vdss)
    48 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Efficiency
    0.6
  • Drain Bias Current
    3 mA
  • Quiescent Drain Current
    0.22 A
  • Power Dissipation (Pdiss)
    95 W
  • Feedback Capacitance
    0.45 pF
  • Input Capacitance
    10 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    6 pF
  • Thermal Resistance
    3 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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