L2701

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L2701 Image

The L2701 from Polyfet RF Devices is a RF Transistor with Power 44 dBm, Power(W) 30 W, Power Gain (Gp) 13 dB, VSWR 10.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Surface Mount. More details for L2701 can be seen below.

Product Specifications

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Product Details

  • Part Number
    L2701
  • Manufacturer
    Polyfet RF Devices
  • Description
    30 W, Si LDMOS Power Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast
  • Application
    Radio, Cellular, Base Stations, MRI
  • Power
    44 dBm
  • Power(W)
    30 W
  • Power Gain (Gp)
    13 dB
  • Transconductance
    1.6 MOhms
  • VSWR
    10.0:1
  • Drain Gate Voltage
    70 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Voltage - Gate-Source (Vgs)
    10 V
  • Drain Efficiency
    0.45
  • Drain Current
    4.5 A
  • Drain Bias Current
    2 mA
  • Quiescent Drain Current
    0.4 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    80 W
  • Feedback Capacitance
    1.6 pF
  • Input Capacitance
    60 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    30 pF
  • Thermal Resistance
    1.8 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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